SK hynix (KRX:000660) broke ground Thursday on its first U.S. next-generation High Bandwidth Memory (HBM) production hub at Purdue University in Indiana.
The facility represents a total investment exceeding $4 billion and is scheduled to begin cleanroom operations by October 2028, according to a statement on Friday.
The mass production of next-generation HBM is expected in the second half of 2029, with the site projected to employ approximately 1,000 workers during commercial operations.
The Indiana fab will operate in tandem with SK hynix's South Korean base, shipping Korean-made wafers to Indiana for packaging and testing before delivering finished Made in USA products to U.S. customers.
An Advanced Packaging R&D Testbed will be established alongside production lines to enable collaboration with customers, universities, and partners on next-generation packaging technologies and rapid prototyping.
SK hynix said the Indiana facility will help stabilize the U.S. semiconductor supply chain and support national security as competition in AI infrastructure intensifies.