I-Pulse on Thursday secured a $250 million award from the US Department of Commerce's CHIPS Research and Development Office for the development of its proprietary semiconductor and pulsed power technology.
The funding will support R&D into high-temperature, high-performance silicon-carbide semiconductor components, including high-current, high-voltage solid-state switches with applications in underground mining, rock crushing, manufacturing, and defense systems, the company said.
I-Pulse said it will develop the silicon-carbide semiconductors in partnership with US national laboratories, universities, and specialized manufacturers.